NATURAL SCIENCES

Journal of fundamental
and
applied researches

Anodic oxidation of silicon carbide in nitrate-phosphate and nitrate-borate electrolytes based on ethylene glycol

2014. №3, pp. 119-126

Makharinets Alexander V. - post-graduate student, Engineering and Technology Academy of Southern Federal University, 44 Nekrasov Str., Taganrog, 347928, Russian Federation, mav1creator@mail.ru

This article proposes mechanisms of galvanostatic formation of silicon carbide anodic oxide films in electrolyte based on ethylene glycol with additives of water, nitric acid and phosphoric or boric acid. Kinetic features of growth of anodic oxide films doped with phosphorus or boron on silicon carbide in complex electrolytes are investigated. Mechanism of the effect of individual components of phosphate and borate electrolytes based on ethylene glycol is considered. Orders of anodic reactions with H PO and H BO are 0.484 and 1.934, respectively. It was suggested that the rate-limiting step of silicon carbide anodic oxide films formation is the reaction of intermediate product formation - silicon monoxide SiO.

Key words: анодные оксидные пленки, анодное окисление карбида кремния, анодирование карбида кремния, anodic oxide films, anodic oxidation of silicon carbide, silicon carbide anodizing